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GaN Photonic-Crystal Surface-Emitting Laser at Blue-Violet Wavelengths

Hideki Matsubara, Susumu Yoshimoto, Hirohisa Saito, Yue Jianglin, Yoshinori Tanaka and Susumu Noda
Science
New Series, Vol. 319, No. 5862 (Jan. 25, 2008), pp. 445-447
Stable URL: http://www.jstor.org/stable/20053203
Page Count: 3
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Abstract

Shorter-wavelength surface-emitting laser sources are important for a variety of fields, including photonics, information processing, and biology. We report on the creation of a current-driven blue-violet photonic-crystal surface-emitting laser. We have developed a fabrication method, named "air holes retained over growth," in order to construct a two-dimensional gallium nitride (GaN)/air photonic-crystal structure. The resulting periodic structure has a photonic-crystal band-edge effect sufficient for the successful operation of a current-injection surface-emitting laser. This represents an important step in the development of laser sources that could be focused to a size much less than the wavelength and be integrated two-dimensionally at such short wavelengths.

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