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p-Type Semiconducting Nickel Oxide as an Efficiency-Enhancing Anode Interfacial Layer in Polymer Bulk-Heterojunction Solar Cells

Michael D. Irwin, D. Bruce Buchholz, Alexander W. Hains, Robert P. H. Chang and Tobin J. Marks
Proceedings of the National Academy of Sciences of the United States of America
Vol. 105, No. 8 (Feb. 26, 2008), pp. 2783-2787
Stable URL: http://www.jstor.org/stable/25461136
Page Count: 5
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Since scans are not currently available to screen readers, please contact JSTOR User Support for access. We'll provide a PDF copy for your screen reader.
p-Type Semiconducting Nickel Oxide as an Efficiency-Enhancing Anode Interfacial Layer in Polymer Bulk-Heterojunction Solar Cells
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Abstract

To minimize interfacial power losses, thin (5-80 nm) layers of NiO, a p-type oxide semiconductor, are inserted between the active organic layer, poly(3-hexylthiophene) (P3HT) + [6,6]-phenyl-C₆₁ butyric acid methyl ester (PCBM), and the ITO (tin-doped indium oxide) anode of bulk-heterojunction ITO/P3HT:PCBM/LiF/Al solar cells. The interfacial NiO layer is deposited by pulsed laser deposition directly onto cleaned ITO, and the active layer is subsequently deposited by spin-coating. Insertion of the NiO layer affords cell power conversion efficiencies as high as 5.2% and enhances the fill factor to 69% and the open-circuit voltage $(V_{{\rm oc}})$ to 638 mV versus an ITO/P3HT:PCBM/LiF/Al control device. The value of such hole-transporting/electron-blocking interfacial layers is clearly demonstrated and should be applicable to other organic photovoltaics.

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