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Electron Injection into Organic Semiconductor Devices from High Work Function Cathodes

Corey V. Hoven, Renqiang Yang, Andres Garcia, Victoria Crockett, Alan J. Heeger, Guillermo C. Bazan and Thuc-Quyen Nguyen
Proceedings of the National Academy of Sciences of the United States of America
Vol. 105, No. 35 (Sep. 2, 2008), pp. 12730-12735
Stable URL: http://www.jstor.org/stable/25463934
Page Count: 6
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Since scans are not currently available to screen readers, please contact JSTOR User Support for access. We'll provide a PDF copy for your screen reader.
Electron Injection into Organic Semiconductor Devices from High Work Function Cathodes
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Abstract

We show that polymer light-emitting diodes with high work-function cathodes and conjugated polyelectrolyte injection/transport layers exhibit excellent efficiencies despite large electron-injection barriers. Correlation of device response times with structure provides evidence that the electron-injection mechanism involves redistribution of the ions within the polyelectrolyte electron-transport layer and hole accumulation at the interface between the emissive and electron-transport layers. Both processes lead to screening of the internal electric field and a lowering of the electron-injection barrier. The hole and electron currents are therefore diffusion currents rather than drift currents. The response time and the device performance are influenced by the type of counterion used.

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