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A Neuron-Silicon Junction: A Retzius Cell of the Leech on an Insulated-Gate Field-Effect Transistor
Peter Fromherz, Andreas Offenhäusser, Thomas Vetter and Jürgen Weis
New Series, Vol. 252, No. 5010 (May 31, 1991), pp. 1290-1293
Published by: American Association for the Advancement of Science
Stable URL: http://www.jstor.org/stable/2875962
Page Count: 4
You can always find the topics here!Topics: Electric potential, Neurons, Electric current, Oxides, Drains, Action potentials, Signals, Cell membranes, Boron, Electrodes
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An identified neuron of the leech, a Retzius cell, has been attached to the open gate of a p-channel field-effect transistor. Action potentials, spontaneous or stimulated, modulate directly the source-drain current in silicon. The electronic signals match the shape of the action potential. The average voltage on the gate was up to 25 percent of the intracellular voltage change. Occasionally weak signals that resemble the first derivative of the action potential were observed. The junctions can be described by a model that includes capacitive coupling of the plasma membrane and the gate oxide and that accounts for variable resistance of the seal.
Science © 1991 American Association for the Advancement of Science