Access

You are not currently logged in.

Access your personal account or get JSTOR access through your library or other institution:

login

Log in to your personal account or through your institution.

Ferroelectric Field Effect in Epitaxial Thin Film Oxide SrCuO$_2$/Pb(Zr$_{0.52}$Ti$_{0.48}$)O$_3$ Heterostructures

C. H. Ahn, J.-M. Triscone, N. Archibald, M. Decroux, R. H. Hammond, T. H. Geballe, Ø. Fischer and M. R. Beasley
Science
New Series, Vol. 269, No. 5222 (Jul. 21, 1995), pp. 373-376
Stable URL: http://www.jstor.org/stable/2888277
Page Count: 4
  • More info
  • Cite this Item
Ferroelectric Field Effect in Epitaxial Thin Film Oxide SrCuO$_2$/Pb(Zr$_{0.52}$Ti$_{0.48}$)O$_3$ Heterostructures
Preview not available

Abstract

A ferroelectric field effect in epitaxial thin film SrCuO$_2$/Pb(Zr$_{0.52}$ Ti$_{0.48}$)O$_3$ heterostructures was observed. A 3.5 percent change in the resistance of a 40 angstrom SrCuO$_2$ layer (a parent high-temperature superconducting compound) was measured when the polarization field of the Pb(Zr$_{0.52}$ Ti$_{0.48}$)O$_3$ layer was reversed by the application of a pulse of small voltage (<5 volts). This effect, both reversible and nonvolatile, is attributed to the electric field-induced charge at the interface of SrCuO$_2$ and Pb(Zr$_{0.52}$ Ti$_{0.48}$)O$_3$. This completely epitaxial thin film approach shows the possibility of making nonvolatile, lowvoltage ferroelectric field effect devices for both applications and fundamental studies of field-induced doping in novel compounds like SrCuO$_2$.

Page Thumbnails

  • Thumbnail: Page 
373
    373
  • Thumbnail: Page 
374
    374
  • Thumbnail: Page 
375
    375
  • Thumbnail: Page 
376
    376