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Modulated Chemical Doping of Individual Carbon Nanotubes
Chongwu Zhou, Jing Kong, Erhan Yenilmez and Hongjie Dai
New Series, Vol. 290, No. 5496 (Nov. 24, 2000), pp. 1552-1555
Published by: American Association for the Advancement of Science
Stable URL: http://www.jstor.org/stable/3078348
Page Count: 4
You can always find the topics here!Topics: Doping, Nanotubes, Electrons, Modulation doping, Chemicals, Lead, Nanotechnology, Motors, Bioengineering, Pn junctions
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Modulation doping of a semiconducting single-walled carbon nanotube along its length leads to an intramolecular wire electronic device. The nanotube is doped n-type for half of its length and p-type for the other half. Electrostatic gating can tune the system into p-n junctions, causing it to exhibit rectifying characteristics or negative differential conductance. The system can also be tuned into n-type, exhibiting single-electron charging and negative differential conductance at low temperatures. The low-temperature behavior is manifested by a quantum dot formed by chemical inhomogeneity along the tube.
Science © 2000 American Association for the Advancement of Science