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Ultrahigh-Density Nanowire Lattices and Circuits
Nicholas A. Melosh, Akram Boukai, Frederic Diana, Brian Gerardot, Antonio Badolato, Pierre M. Petroff and James R. Heath
New Series, Vol. 300, No. 5616 (Apr. 4, 2003), pp. 112-115
Published by: American Association for the Advancement of Science
Stable URL: http://www.jstor.org/stable/3834311
Page Count: 4
You can always find the topics here!Topics: Nanowires, Superlattices, Silicon, Electric current, Semiconductors, Thin films, Trolley wire, Etching, Semiconductor wafers, Narrative devices
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We describe a general method for producing ultrahigh-density arrays of aligned metal and semiconductor nanowires and nanowire circuits. The technique is based on translating thin film growth thickness control into planar wire arrays. Nanowires were fabricated with diameters and pitches (center-to-center distances) as small as 8 nanometers and 16 nanometers, respectively. The nanowires have high aspect ratios (up to 106), and the process can be carried out multiple times to produce simple circuits of crossed nanowires with a nanowire junction density in excess of 1011 per square centimeter. The nanowires can also be used in nanomechanical devices; a high-frequency nanomechanical resonator is demonstrated.
Science © 2003 American Association for the Advancement of Science