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MULTISTEP FINITE VOLUME APPROXIMATIONS TO THE TRANSIENT BEHAVIOR OF A SEMICONDUCTOR DEVICE ON GENERAL 2D OR 3D MESHES
Journal of Computational Mathematics
Vol. 25, No. 4 (July 2007), pp. 485-496
Stable URL: http://www.jstor.org/stable/43693383
Page Count: 12
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In this paper, we consider a hydrodynamic model of the semiconductor device. The approximate solutions are obtained by a mixed finite volume method for the potential equation and multistep upwind finite volume methods for the concentration equations. Error estimates in some discrete norms are derived under some regularity assumptions on the exact solutions.
Journal of Computational Mathematics © 2007 Institute of Computational Mathematics and Scientific/Engineering Computing