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Organometallic Molecules for Semiconductor Fabrication [and Discussion]
D. V. Shenai-Khatkhate, Marjory B. Parker, A. E. D. McQueen, J. B. Mullin, D. J. Cole-Hamilton and P. Day
Philosophical Transactions of the Royal Society of London. Series A, Mathematical and Physical Sciences
Vol. 330, No. 1610, Molecular Chemistry for Electronics (Feb. 23, 1990), pp. 173-182
Published by: Royal Society
Stable URL: http://www.jstor.org/stable/53692
Page Count: 10
You can always find the topics here!Topics: Adducts, Lewis bases, Tellurium, Impurities, Materials, Semiconductors, Atoms, Molecules, Materials processing, Vapor phases
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Adduct purification of metal alkyls for use in metal-organic vapour-phase epitaxy is described and shown to give high purity alkyls of Al, Ga, In, Cd, Zn and Te. In most cases involatile Lewis bases are used to form dissociable adducts, but for tellurium alkyls, halides of mercury or cadmium are used. Alternative source materials such as higher alkyls, volatile adducts and mixed alkyls are discussed and new results on the stability of mixed alkyls of tellurium are presented.
Philosophical Transactions of the Royal Society of London. Series A, Mathematical and Physical Sciences © 1990 Royal Society