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Transmission Electron Microscopy of Micro- and Nanostructures in Semiconductors

A. G. Cullis
Philosophical Transactions: Mathematical, Physical and Engineering Sciences
Vol. 354, No. 1719, Three-Dimensional Chemical Characterization of Electronic Materials (Nov. 15, 1996), pp. 2635-2651
Published by: Royal Society
Stable URL: http://www.jstor.org/stable/54732
Page Count: 5
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Transmission Electron Microscopy of Micro- and Nanostructures in Semiconductors
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Abstract

Semiconducting materials science and technology are extremely active areas of research because they underpin advanced electronic device fabrication. Electron microscopy studies of the materials play a vital role in the work, since they provide uniquely detailed structural and chemical information on all important length scales. The present article reviews applications of, primarily, transmission electron microscopy in critical areas ranging from epitaxial growth through to final device analysis. The examples provided demonstrate the comprehensive assessment of materials structure and composition which can be achieved.

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