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Geometrical Model for the Energy of Semicoherent Interphase Interfaces
Roger C. Ecob and Brian Ralph
Proceedings of the National Academy of Sciences of the United States of America
Vol. 77, No. 4, [Part 1: Physical Sciences] (Apr., 1980), pp. 1749-1753
Published by: National Academy of Sciences
Stable URL: http://www.jstor.org/stable/8428
Page Count: 5
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The basis for the considerations given in this paper is the O-lattice description of crystalline interfaces of Bollmann. In the development of his approach presented here, all possible interfacial planes between two crystal phases having a defined orientation relationship are considered. The energies of these interfaces are then computed in terms of the energies of the primary intrinsic dislocations. A number of modeling interactions are incorporated into this approach, and a better agreement with experimental data is thus obtained.
Proceedings of the National Academy of Sciences of the United States of America © 1980 National Academy of Sciences